SD1100C Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Fabricante
SD1100C Datasheet PDF : 8 Pages
| |||
SD1100C..C Series
Vishay High Power Products Standard Recovery Diodes
(Hockey PUK Version),
1400 A
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average forward current
at heatsink temperature
Maximum RMS forward current
IF(AV)
IF(RMS)
Maximum peak, one-cycle forward,
non-repetitive current
IFSM
Maximum I2t for fusing
I2t
Maximum I2√t for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward
slope resistance
High level value of forward
slope resistance
Maximum forward voltage drop
I2√t
VF(TO)1
VF(TO)2
rf1
rf2
VFM
TEST CONDITIONS
SD1100C..C
04 TO 20 25 TO 32
180° conduction, half sine wave
Double side (single side) cooled
1400 (795) 1100 (550)
55 (85) 55 (85)
25 °C heatsink temperature double side cooled
2500
2000
t = 10 ms No voltage
t = 8.3 ms reapplied
13 000
13 600
10 500
11 000
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
10 930
11 450
846
772
8830
9250
551
503
t = 10 ms 100 % VRRM
t = 8.3 ms reapplied
598
390
546
356
t = 0.1 to 10 ms, no voltage reapplied
8460
5510
(16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum
(I > π x IF(AV)), TJ = TJ maximum
0.78
0.94
0.84
0.88
(16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum 0.35
0.40
(I > π x IF(AV)), TJ = TJ maximum
Ipk = 1500 A, TJ = TJ maximum
tp = 10 ms sinusoidal wave
0.26
0.38
1.31
1.44
UNITS
A
°C
A
kA2s
kA2√s
V
mΩ
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction operating
temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to heatsink
Mounting force, ± 10 %
Approximate weight
Case style
TJ
TStg
RthJ-hs
DC operation single side cooled
DC operation double side cooled
See dimensions - link at the end of datasheet
SD1100C..C
04 TO 20 25 TO 32
- 40 to 180 - 40 to 150
- 55 to 200
0.076
0.038
9800 (1000)
83
B-43
UNITS
°C
K/W
N (kg)
g
ΔRthJ-hs CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
SINGLE SIDE DOUBLE SIDE
RECTANGULAR CONDUCTION
SINGLE SIDE DOUBLE SIDE
TEST CONDITIONS
180°
0.007
0.007
0.005
0.005
120°
0.008
0.008
0.008
0.008
90°
0.010
0.010
0.011
0.011
TJ = TJ maximum
60°
0.015
0.015
0.016
0.016
30°
0.026
0.026
0.026
0.026
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
UNITS
K/W
www.vishay.com
2
For technical questions, contact: ind-modules@vishay.com
Document Number: 93535
Revision: 14-May-08
Share Link: 