MMBT2222AW Ver la hoja de datos (PDF) - KEXIN Industrial

Número de pieza

componentes Descripción

Fabricante

MMBT2222AW

General Purpose Transistor

KEXIN Industrial 

SMD Type

TransistIoCrs

MMBT2222AW

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min Typ Max Unit

Collector-emitter breakdown voltage

V(BR)CEO IC = 1.0 mA, IB = 0

40

V

Collector-base breakdown voltage

V(BR)CBO IC = 10 ìA, IE = 0

75

V

Emitter-base breakdown voltage

V(BR)EBO IE = 10 ìA, IC = 0

6

V

Base cutoff current

IBL

VCE = 60 V, VEB = 3.0 V

20 nA

Collector cutoff current

ICEX VCE = 60 V, VEB = 3.0 V

10 nA

DC current gain *

HFE IC = 150 mA, VCE = 10 V

100

300

Collector-emitter saturation voltage *

Base-emitter saturation voltage *

VCE(sat)

VBE(sat)

IC = 150 mA, IB = 15 mA

IC = 500 mA, IB = 50 mA

IC = 150 mA, IB = 15 mA

IC = 500 mA, IB = 50 mA

0.3

1.0

V

0.6

1.2

2.0

Current-gain-bandwidth product

fT

IC = 20 mA, VCE = 20 V, f = 100 MHz 300

MHz

Output capacitance

Cobo VCB = 10 V, IE = 0, f = 1.0 MHz

8.0 pF

Input capacitance

Cibo VEB = 0.5 V, IC = 0, f = 1.0 MHz

30 pF

Input impedance

Voltage feedback ratio

Small-sgnal current gain

hie

VCE = 10 V, IC = 10 mA, f = 1.0 kHz

hre

VCE = 10 V, IC = 10 mA, f = 1.0 kHz

hfe

VCE = 10 V, IC = 10 mA, f = 1.0 kHz

0.25

75

1.25

4.0

375

kÙ

X10-4

Output admittance

Noise figure

Delay time

Rise time

hoe VCE = 10 V, IC = 10 mA, f = 1.0 kHz

25

NF

VCE = 10 V, IC = 100 ìA, RS = 1.0 kÙ, f

= 1.0 kHz

td

VCC = 3.0 V, VBE = -0.5 V,

tr

IC = 150 mA, IB1 = 15 mA

200 ìmhos

4.0 dB

10 ns

25 ns

Storage time

ts

VCC = 30 V, IC = 150 mA,

225 ns

Fall time

tf

IB1 = IB2 = 15 mA

60 ns

* Pulse test: pulse width 300 ìs, duty cycle 2.0%.

Marking

Marking

P1

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