BUP 410D
Typ. switching time
I = f (IC) , inductive load , Tj = 125°C
par.: VCE = 300 V, VGE = ± 15 V, RG = 100 Ω
10 3
Typ. switching time
t = f (RG) , inductive load , Tj = 125°C
par.: VCE = 300 V, VGE = ± 15 V, IC = 6 A
10 3
t
ns
t
ns
tdoff
tdoff
10 2
10 2
tr
tf
tdon
tf
tr
tdon
10 1
0
3
6
9
A
15
IC
10 1
0
50
100 150 200
Ω
300
RG
Typ. switching losses
E = f (IC) , inductive load , Tj = 125°C
par.: VCE = 300 V, VGE = ± 15 V, RG = 100 Ω
1.0
Typ. switching losses
E = f (RG) , inductive load , Tj = 125°C
par.: VCE = 300V, VGE = ± 15 V, IC = 6 A
0.5
E mWs
E mWs
Eoff
Eoff
0.6
Eon
0.3
Eon
0.4
0.2
0.2
0.0
0
3
6
9
A
15
IC
Semiconductor Group
7
0.1
0.0
0
50
100 150 200
Ω
300
RG
Dec-12-1996