BUP410D Ver la hoja de datos (PDF) - Siemens AG
Número de pieza
componentes Descripción
Fabricante
BUP410D Datasheet PDF : 9 Pages
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BUP 410D
Maximum Ratings
Parameter
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Thermal Resistance
Thermal resistance, chip case
Diode thermal resistance, chip case
Symbol
-
-
RthJC
RthJCD
Values
Unit
E
-
55 / 150 / 56
≤ 2.5
K/W
3.1
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Gate threshold voltage
VGE(th)
V
VGE = VCE, IC = 0.35 mA, Tj = 25 °C
4.5
5.5
6.5
Collector-emitter saturation voltage
VCE(sat)
VGE = 15 V, IC = 6 A, Tj = 25 °C
-
2.1
2.7
VGE = 15 V, IC = 6 A, Tj = 125 °C
-
2.2
2.8
VGE = 15 V, IC = 12 A, Tj = 25 °C
-
3
-
VGE = 15 V, IC = 12 A, Tj = 125 °C
-
3.3
-
Zero gate voltage collector current
ICES
µA
VCE = 600 V, VGE = 0 V, Tj = 25 °C
-
-
80
Gate-emitter leakage current
IGES
nA
VGE = 25 V, VCE = 0 V
-
-
100
Semiconductor Group
2
Dec-12-1996
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