RMBA09500-58 Ver la hoja de datos (PDF) - Raytheon Company

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RMBA09500-58

Cellular 2 Watt Linear GaAs MMIC Power Amplifier

Raytheon Company 

RMBA09500-58 - Cellular 2 Watt Linear GaAs

RF Components MMIC Power Amplifier

Application

Information

PRODUCT INFORMATION

CAUTION: THIS IS AN ESD SENSITIVE DEVICE.

The following describes a procedure for evaluating the RMBA09500-58, a monolithic high efficiency

power amplifier, in a surface mount package, designed for use as a driver stage for Cellular base

stations, or as the final output stage for Micro- and Pico-Cell base stations. Figure 1 shows the package

outline and the pin designations. Figure 2 shows the functional block diagram of the packaged product.

The RMBA09500-58 requires external passive components for DC bias and RF input and output

matching circuits as shown in Figure 3 and the Parts List. A recommended schematic circuit is shown in

Figure 3. The gate biases for the two stages of the amplifier may be set by simple resistive voltage

dividers. Figure 4 shows a typical layout of an evaluation board, corresponding to the schematic circuits

of figure 3. The following designations should be noted:

(1) Pin designations are as shown in figure 2.

(2) Vg1 and Vg2 are the Gate Voltages (negative)

applied at the pins of the package

(3) Vgg1 and Vgg2 are the negative supply

voltages at the evaluation board terminals

(4) Vd1 and Vd2 are the Drain Voltages (positive)

applied at the pins of the package

(5) Vdd1 and Vdd2 are the positive supply

voltages at the evaluation board terminals

Note: The 2 terminals of Vdd1 and Vdd2 may be

tied together.

The base of the package must be soldered on to a

heat sink for proper operation.

Test Procedure

for the evaluation board

(RMBA09500-58-TB)

CAUTION: LOSS OF GATE VOLTAGES (VG1, VG2) WHILE CORRESPONDING DRAIN VOLTAGES

(Vdd) ARE PRESENT CAN DAMAGE THE AMPLIFIER.

The following sequence must be followed to properly test the amplifier. (It is necessary to add a fan to

provide air cooling across the heat sink of RMBA09500.) Note: Vdd1, 2 are tied together.

Step 1: Turn off RF input power.

Step 2: Use GND terminal of the evaluation board

for the ground of the DC supplies. Slowly

apply gate supply voltages as specified on

results sheet supplied with test board to

the board terminals Vgg1 and Vgg2.

Step 3: Slowly apply drain supply voltages of

+7.0 V to the board terminals Vdd1, 2.

Adjust Vgg to set the total quiescent

current (with no RF applied) Idq as per

supplied result sheet. [Gate supply

voltages (Vgg i.e., Vgg1, Vgg2) may be

adjusted, only if quiescent current (Idq1

and Idq2) values desired are different

from those noted on the data summary

supplied with product samples].

Step 4: After the bias condition is established,

RF input signal may now be applied at the

appropriate frequency band and

appropriate power level.

Step 5: Follow turn-off sequence of:

(i) Turn off RF Input Power

(ii) Turn down and off drain voltages

Vdd1, 2.

(iii) Turn down and off gate voltages Vgg1

and Vgg2.

www.raytheonrf.com

Specifications are based on most current or latest revision.

Revised June 27, 2003

Page 2

Raytheon RF Components

362 Lowell Street

Andover, MA 01810

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