RMBA09500-58(1999) Ver la hoja de datos (PDF) - Raytheon Company

Número de pieza

componentes Descripción

Fabricante

RMBA09500-58
(Rev.:1999)

Cellular/GSM 2 Watt Linear GaAs MMIC Power Amplifier

Raytheon Company 

Raytheon

Raytheon Commercial Electronics

RMBA09500-58

Cellular/GSM 2 Watt Linear GaAs MMIC Power Amplifier

Application Information

CAUTION: THIS IS AN ESD SENSITIVE DEVICE.

The following describes a procedure for evaluating the RMBA09500-58, a monolithic high efficiency

power amplifier, in a surface mount package, designed for use as a driver stage for Cellular/GSM base

stations, or as the final output stage for Micro- and Pico-Cell base stations. Figure 1 shows the

package outline and the pin designations. Figure 2 shows the functional block diagram of the

packaged product. It should be noted that RMBA09500-58 requires external passive

components for DC bias and RF output matching circuits. A recommended schematic circuit is

shown in Figure 3. The gate biases for the two stages of the amplifier may be set by simple

resistive voltage dividers. Figure 4 shows a typical layout of an evaluation board,

corresponding to the schematic circuits of figure 3. The following designations should be noted:

(1) Pin designations are as shown in figure 2.

(2) Vg1 and Vg2 are the Gate Voltages (negative) applied at the pins of the package

(3) Vgg1 and Vgg2 are the negative supply voltages at the evaluation board terminals

(4) Vd1 and Vd2 are the Drain Voltages (positive) applied at the pins of the package

(5) Vdd is the positive supply voltage at the evaluation board terminal.

The base of the package must be soldered on to a heat sink for proper operation.

Test Procedure for the evaluation board (RMBA09500-58-TB)

CAUTION:

LOSS OF GATE VOLTAGES (VG1, VG2) WHILE CORRESPONDING DRAIN

VOLTAGES (Vdd) ARE PRESENT CAN DAMAGE THE AMPLIFIER.

The following sequence must be followed to properly test the amplifier. (It is necessary to add a fan to

provide air cooling across the heat sink of RMBA09500.) Note: Vdd1, 2 are tied together.

Step 1: Turn off RF input power.

Step 2: Use GND terminal of the evaluation board for the ground of the DC supplies. Set Vgg1 and

Vgg2 to -3V (pinch-off).

Step 3:

Step4:

Step 5:

Slowly apply drain supply voltages of +7V to the board terminal Vdd ensuring that there is no

short.

Adjust Vgg1 down from -3V until the drain current (with no RF applied) increases to Idq1 as per

supplied result sheet. Then adjust Vgg2 until the total drain current becomes equal to the sum

of Idq1 and Idq2.

After the bias condition is established, RF input signal may now be applied at the appropriate

frequency band and appropriate power level.

Step 6: Follow turn-off sequence of:

(i) Turn off RF Input Power (ii) Turn down and off drain voltage Vdd.

(iii) Turn down and off gate voltages Vgg1 and Vgg2.

This is advanced information which contains data on products in development. Characteristic

performance data and specifications are subject to change without notice.

Tel: 978-470-9421

FAX: 978-470-9201

www.raytheon.com/micro

Revised October 22, 1999

Page 3

Raytheon RF Components

362 Lowell Street

Andover, MA 01810

Share Link: