RMBA09500-58(1999) Ver la hoja de datos (PDF) - Raytheon Company
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RMBA09500-58 Datasheet PDF : 7 Pages
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Raytheon
Raytheon Commercial Electronics
RMBA09500-58
Cellular/GSM 2 Watt Linear GaAs MMIC Power Amplifier
Description
Features
Maximum
Ratings
Electrical
Characteristics*
(*50 Ohm System,
VD = 7V, T = 25¡C)
The RMBA09500 is a high power, highly linear Power Amplifier. The two stage
circuit uses RaytheonÕs pHEMT process. It is designed for use as a driver
stage for Cellular/GSM base stations, or as the output stage for Micro- and
Pico-Cell base stations. The amplifier has been optimized for high linearity
requirements for CDMA operation. The device is matched for 50 ohms input
impedance. The bias currents of the amplifier can be adjusted to obtain
optimum power, linearity and efficiency characteristics for GSM, AMPS, NADC
and CDMA systems.
n 2 Watt Linear output power at 38 dBc ACPR1 for CDMA operation
n Small Signal Gain of > 30 dB
n Small outline SMD package
Rating
Drain Supply Voltage (Note 1)
Gate Supply Voltage
RF Input Power (from 50Ω source)
Operating Case Temperature Range
Storage Temperature Range
Parameter
Min
Frequency Ranges
869
935
Gain (small signal)
Over 869-894 MHz
Over 935-960 MHz
Gain variation:
Over frequency range
Over temperature range
Noise Figure
Linear output power:
for CDMA (Note 2)
33
Saturated output power(Note 3)
OIP3(note 4)
PAE (CDMA @2W note 2)
Input VSWR (50Ω)
Drain Voltage (VD)
Gate Voltages
Quiescent current (IDQ1, IDQ2) (Note 5)
Thermal Resistance
(Channel to Case) Rjc
Symbol
VD
VG
PRF
TC
TS
Typ
Value
Unit
+10
Volts
-5
Volts
+5
dBm
-30 to +85 ¡C
-40 to +100 ¡C
Max
Unit
894
MHz
960
MHz
32
dB
30
dB
+/-1
dB
+/-1.5
dB
6
dB
38
43
30
2:1
7
(Note 3)
150,400
dBm
dBm
dBm
%
Volts
mA
11
¡C/W
Notes:
1. Not with RF power simultaneously applied.
2. 9 Channel Forward Link QPSK Source; 1.23 Mbps modulation rate. ACPR1 measured at 885 kHz offset at a value ≥ 38 dBc.
CDMA Waveform measured using the ratio of the average power within the 1.23 MHz channel and within a 30 kHz bandwidth
at an 885 MHz offset.
3. Single tone at Bandcenter.
4. Two tones: 1.25 MHz apart at Bandcenter, bias optimized
5. Quiescent current can be adjusted to optimize the linearity of the amplifier for differing operation. Default biasing is optimized
for CDMA (Ref. Note 2). Gate voltages are to be adjusted to achieve these quiescent currents.
This is advanced information which contains data on products in development. Characteristic
performance data and specifications are subject to change without notice.
Tel: 978-470-9421
FAX: 978-470-9201
www.raytheon.com/micro
Revised October 22, 1999
Page 1
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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