2SC4982 Ver la hoja de datos (PDF) - Quanzhou Jinmei Electronic

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Fabricante

2SC4982

Silicon NPN Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon NPN Power Transistors

Product Specification

2SC4982

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0

VCEsat Collector-emitter saturation voltage IC=5A; IB=0.25A

VBEsat Base-emitter saturation voltage

IC=5A; IB=0.25A

ICBO

Collector cut-off current

ICEO

Collector cut-off current

IEBO

Emitter cut-off current

At rated volatge

At rated volatge

hFE

DC current gain

IC=5A ; VCE=2V

fT

Transition frequency

IC=1A ; VCE=10V

Switching times

ton

Turn-on time

ts

Storage time

tf

Fall time

IC=5A;IB1=0.5A

IB2=0.5A ,RL=5Ω

VBB2=4V

MIN TYP. MAX UNIT

80

V

0.3

V

1.2

V

0.1

mA

0.1

mA

70

50

MHz

0.3

μs

1.5

μs

0.2

μs

2

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