2SC4982 Ver la hoja de datos (PDF) - New Jersey Semiconductor
Número de pieza
componentes Descripción
Fabricante
2SC4982 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VcEO(SUS) Collector-Emitter Sustaining Voltage lc=0.1A; IB=0
VcE(sat) Collector-Emitter Saturation Voltage lc= 5A; IB= 0.25A
VeE(sat) Base-Emitter Saturation Voltage
lc= 5A; IB= 0.25A
ICBO
Collector Cutoff Current
At rated Voltage
ICEO
Collector Cutoff Current
At rated Voltage
IEBO
Emitter Cutoff Current
At rated Voltage
hFE
DC Current Gain
lc= 5A; VGE= 2V
fr
Current-Gain—Bandwidth Product lc=1A;VCE=10V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
lc= 5A, IB1= 0.5A; IB2= -0.5A;
RL= 5 Q ; VBB2= 4V
2SC4982
MIN TYP. MAX UNIT
80
V
0.3
V
1.2
V
100
uA
100
wA
100
uA
70
50
MHz
0.3
us
1.5
HS
0.2
us
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