IXTH13N80 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXTH13N80 Datasheet PDF : 4 Pages
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IXTH 11N80
IXTM 11N80
IXTH 13N80
IXTM 13N80
Fig.7 Gate Charge Characteristic Curve
10
VDS = 400V
8
ID = 13A
IG = 10mA
6
4
2
0
0
25 50 75 100 125 150
Gate Charge - nCoulombs
Fig.9 Capacitance Curves
4500
Ciss
4000
3500
3000
2500
2000
f = 1 MHz
VDS = 25V
1500
1000
Coss
500
Crss
0
0
5
10
15
20
25
VCE - Volts
Fig.11 Transient Thermal Impedance
1
Fig.8 Forward Bias Safe Operating Area
Limited by RDS(on)
10
1
10µs
100µs
1ms
10ms
100ms
0.1
1
10
100
VDS - Volts
1000
Fig.10 Source Current vs. Source
to Drain Voltage
18
16
14
12
10
8
6
4
TJ = 125°C
TJ = 25°C
2
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Volts
D=0.5
0.1
D=0.2
D=0.1
D=0.05
0.01 D=0.02
D=0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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