IXTH13N80 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXTH13N80 Datasheet PDF : 4 Pages
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IXTH 11N80
IXTM 11N80
IXTH 13N80
IXTM 13N80
Fig. 1 Output Characteristics
18
16
14
12
10
8
6
4
2
0
0
2
4
6
8
10 12
VDS - Volts
Fig. 3 R vs. Drain Current
DS(on)
1.40
1.35 TJ = 25°C
1.30
1.25
1.20
1.15
VGS = 10V
1.10
1.05
1.00
0.95
0.90
0 2 4 6 8 10 12 14 16 18 20 22 24 26
ID - Amperes
Fig. 5 Drain Current vs.
Case Temperature
18
16
14
12
10
8
6
4
2
0
-50 -25 0 25 50 75 100 125 150
TC - Degrees C
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700 Fax: 408-496-0670
Fig. 2 Input Admittance
18
16 TJ = 25°C
VDS = 10V
14
12
10
8
6
4
2
0
0 1 2 3 4 5 6 7 8 9 10
VGS - Volts
Fig. 4 Temperature Dependence
of Drain to Source Resistance
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
-50 -25 0 25 50 75 100 125 150
TJ - Degrees C
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
1.2
VGS(th)
1.1
1.0
0.9
0.8
0.7
0.6
0.5
-50 -25 0 25 50 75 100 125 150
TJ - Degrees C
IXYS Semiconductor
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030 Fax: +49-6206-503629
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