HYB3116400BJ Ver la hoja de datos (PDF) - Infineon Technologies
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HYB3116400BJ Datasheet PDF : 26 Pages
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HYB 3116(7)400BJ/BT(L) -50/-60/-70
3.3V 4Mx4-DRAM
AC Characteristics 5)6)
16F
TA = 0 to 70 °C,VCC = 3.3 V ± 0.3 V, tT = 5 ns
Parameter
Symbol
Limit Values
Unit Note
-50
-60
-70
min. max. min. max. min. max.
common parameters
Random read or write cycle time tRC
RAS precharge time
tRP
RAS pulse width
tRAS
CAS pulse width
tCAS
Row address setup time
tASR
Row address hold time
tRAH
Column address setup time
tASC
Column address hold time
tCAH
RAS to CAS delay time
tRCD
RAS to column address delay
tRAD
time
90 –
110 –
130 –
ns
30 –
40 –
50 –
ns
50 10k 60 10k 70 10k ns
13 10k 15 10k 20 10k ns
0
–
0
–
0
–
ns
8
–
10 –
10 –
ns
0
–
0
–
0
–
ns
10 –
15 –
15 –
ns
18 37 20 45 20 50
13 25 15 30 15 35 ns
RAS hold time
tRSH
CAS hold time
tCSH
CAS to RAS precharge time
tCRP
Transition time (rise and fall)
tT
Refresh period for HYB3117400 tREF
Refresh period for HYB3116400 tREF
Refresh period for L-version
tREF
13
15 –
20 –
ns
50
60 –
70 –
ns
5
–
5
–
5
–
ns
3 50 3 50 3 50 ns 7
– 32 – 32 – 32 ms
– 64 – 64 – 64 ms
– 256 – 256 – 256 ms
Read Cycle
Access time from RAS
tRAC
Access time from CAS
tCAC
Access time from column address tAA
OE access time
tOEA
Column address to RAS lead time tRAL
Read command setup time
tRCS
Read command hold time
tRCH
Read command hold time
tRRH
referenced to RAS
– 50 – 60 – 70 ns 8, 9
– 13 – 15 – 20 ns 8, 9
– 25 – 30 – 35 ns 8,10
– 13 – 15 – 20 ns
25 –
30 –
35 –
ns
0
–
0
–
0
–
ns
0
–
0
–
0
–
ns 11
0
–
0
–
0
–
ns 11
Semiconductor Group
8
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