BD543B Ver la hoja de datos (PDF) - New Jersey Semiconductor
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componentes Descripción
Fabricante
BD543B Datasheet PDF : 2 Pages
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Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BD543
V(BR)CEO
Collector-Emitter
Breakdown Voltage
BD543A
BD543B
BD543C
VcE(sat)-i Collector-Emitter Saturation Voltage lc= 3A; IB= 0.3A
VcE(sat)-2 Collector-Emitter Saturation Voltage lc= 5A; IB= 1A
VcE(sat)-3 Collector-Emitter Saturation Voltage IC=8A;IB=1.6A
VsE(on)
Base-Emitter On Voltage
lc= 5A; VCE= 4V
BD543
VCE= 40V; VBE= 0
ICES
Collector
Cutoff Current
BD543A
BD543B
VCE= 60V; VBE= 0
VCE= 80V; VBE= 0
BD543C
VGE=100V;VBE=0
Collector
ICEO
Cutoff Current
BD543/A
VCE= 30V; IB= 0
BD543B/C VCE= 60V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; lc= 0
hpE-1
DC Current Gain
lc=1A;VCE=4V
hre-2
DC Current Gain
lc= 3A; VCE= 4V
hFE-3
DC Current Gain
lc= 5A; VCE= 4V
Switching Times
ton
Turn-On Time
toff
Turn-Off Time
IC=6A;IB1=-IB2=0.6A;
VBE(off)= -4V RL= 5 n
BD543/A/B/C
MIN TYP. MAX UNIT
40
60
V
80
100
0.5
V
0.5
V
1.0
V
1.4
V
0.4
0.4
mA
0.4
0.4
0.7 mA
1
mA
60
40
15
0.6
ys
1.0
ws
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