BD543B Ver la hoja de datos (PDF) - New Jersey Semiconductor
Número de pieza
componentes Descripción
Fabricante
BD543B Datasheet PDF : 2 Pages
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
u-s A
Silicon NPN Power Transistors
TELEPHONE: (973) 376-2922
(212)227-6005
BD543/A/B/C
DESCRIPTION
• 70 W at 25°C Case Temperature
• Complement to Type BD544/A/B/C
• 8 A Continuous Collector Current
APPLICATIONS
. ,-,,
2
• Designed for high power audio amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
BD543
40
BD543A
60
VCBO
Collector-Base Voltage
V
BD543B
80
BD543C
100
BD543
40
BD543A
60
VCEO
Collector-Emitter Voltage
V
BD543B
80
BD543C
100
VEBO
Emitter-Base Voltage
5
V
Ic
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
Collector Power Dissipation
@ TC=25'C
PC
Collector Power Dissipation
@ Ta=25°C
Tj
Junction Temperature
Tstg
Storage Temperature Range
10
A
70
W
2
150
°C
-65-150 •c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Rfh j-a
Thermal Resistance.Junction to Case
Thermal Resistance.Junction to Ambient
MAX
4.17
62.5
UNIT
•c/w
'CM/
Iij
*', :
123
PIN 1. BASE
2. COLLECTOR
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mm
DIM MiN MAX
A 15.70 15.90
B 9.90 10.10
C 4.20 4.40
D 0.70 0.90
F 3.40 3.60
G 4.98 5.18
H 2.70 2.90
J 0.44 0.46
K 13.20 13.40
L 1.10 1.30
Q 2.70 2.90
R 2.50 2.70
S 1.29 1.31
U 6.45 6.65
V 8.66 8.86
NJ Scmi-C'oiiductors reserves the right to change tost conditions, parameter limits and package dimensions nithout
notice. Information furnished by N.I Seiiii-C'oiuluctors is believed to he both accnnite and reliable ;it the lime ol'eohi
to press. | |oue\er. N.I Seini-CondiicUirs assumes no responsibility for an> errors or omissions discovered in its use.
X I Seini-C (Muluclnis eneiuiraues eusioniiTs lo verify that dalasheels ;»v ciirivnl before placinj: orders.
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