SI3850ADV Ver la hoja de datos (PDF) - Vishay Semiconductors
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SI3850ADV Datasheet PDF : 2 Pages
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Specification Comparison
Vishay Siliconix
Si3850ADV vs. Si3850DV
Description: Complementary MOSFET Half-Bridge (N- and P-Channel)
Package:
TSOP-6
Pin Out:
Identical
Part Number Replacements
Si3850ADV-T1-E3 Replaces Si3850DV-T1-E3
Si3850ADV-T1-E3 Replaces Si3850DV-T1
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Si3850ADV
Drain-Source Voltage
N-Ch
20
VDS
P-Ch
- 20
Gate-Source Voltage
N-Ch
VGS
P-Ch
± 12
± 12
Continuous Drain Current
N-Ch
TA = 25 °C
P-Ch
ID
N-Ch
TA = 70 °C
P-Ch
1.4
- 0.96
1.1
- 0.77
Pulsed Drain Current
N-Ch
IDM
P-Ch
3.5
- 2.0
Continuous Source Current
(MOSFET Diode Conduction)
N-Ch
IS
P-Ch
0.9
- 0.9
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
1.08
0.7
Operating Junction and Storage Temperature Range
Tj and Tstg
- 55 to 150
Maximum Junction-to-Ambient
RthJA
115
Si3580DV
20
- 20
± 12
± 12
1.2
- 0.85
0.95
- 0.65
3.5
- 2.5
1
-1
1.25
0.8
- 55 to 150
100
Unit
V
A
W
°C
°C/W
Document Number: 73853
Revision: 31-Oct-06
www.vishay.com
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