SI3850DV-T1 Ver la hoja de datos (PDF) - Vishay Semiconductors
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SI3850DV-T1 Datasheet PDF : 8 Pages
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Si3850DV
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min Typ Max Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = VGS, ID = −250 mA
VDS = 0 V, VGS = "12 V
VDS = 20 V, VGS = 0 V
VDS = −20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 70_C
VDS = −20 V, VGS = 0 V, TJ = 70_C
VDS = 5 V, VGS = 4.5 V
VDS = −5 V, VGS = −4.5 V
VGS = 4.5 V, ID = 0.5 A
VGS = −4.5 V, ID = −0.5 A
VGS = 3.0 V, ID = 0.5 A
VGS = −3.0 V, ID = −0.5 A
VDS = 10 V, ID = 1.2 A
VDS = −10 V, ID = −0.85 A
IS = 1 A, VGS = 0 V
IS = −1 A, VGS = 0 V
N-Ch
P-Ch
0.6
−0.6
1.5
V
−1.5
"100
nA
N-Ch
1
P-Ch
N-Ch
−1
mA
10
P-Ch
−10
N-Ch
3.0
A
P-Ch −2.0
N-Ch
0.38 0.500
P-Ch
N-Ch
0.70
1.00
W
0.55 0.750
P-Ch
1.10
1.30
N-Ch
2.7
S
P-Ch
1.2
N-Ch
P-Ch
1.2
V
−1.2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
trr
N-Channel
VDS = 10 V, VGS = 4.5 V, ID = 1.2 A
P-Channel
VDS = −10 V, VGS = −4.5 V
ID = −0.85 A
N-Channel
VDD = 10 V, RL = 10 W
ID ^ 1 A, VGEN = 4.5 V, Rg = 6 W
P-Channel
VDD = −10 V, RL = 10 W
ID ^ −1 A, VGEN = −4.5 V, Rg = 6 W
IF = 1 A, di/dt = 100 A/ms
IF = −1 A, di/dt = 100 A/ms
N-Ch
0.8
2.0
P-Ch
1.10
2.5
N-Ch
0.25
nC
P-Ch
0.50
N-Ch
0.2
P-Ch
0.2
N-Ch
0.3
P-Ch
3
1.5
W
16
N-Ch
10
20
P-Ch
8
15
N-Ch
20
40
P-Ch
20
40
N-Ch
P-Ch
20
40
ns
10
20
N-Ch
16
30
P-Ch
8
15
N-Ch
40
80
P-Ch
40
80
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 70778
S-50132—Rev. D, 24-Jan-05
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