SI3850DV(1998) Ver la hoja de datos (PDF) - Vishay Semiconductors
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SI3850DV Datasheet PDF : 6 Pages
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Si3850DV
Vishay Siliconix
Complementary MOSFET Half-Bridge (N- and P-Channel)
PRODUCT SUMMARY
VDS (V)
N-Channel
20
P-Channel
–20
rDS(on) (W)
0.500 @ VGS = 4.5 V
0.750 @ VGS = 3.0 V
1.00 @ VGS = –4.5 V
1.30 @ VGS = –3.0 V
TSOP-6
Top View
G1
1
6
S1
D
2
5
D
G2
3
4
S2
ID (A)
"1.2
"1.0
"0.85
"0.75
S2
G2
D
G1
S1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
(Surface Mounted on FR4 Board)
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
20
–20
"12
"12
"1.2
"0.85
"0.95
"0.65
"3.5
"2.5
1
–1
1.25
0.8
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (Surface Mounted on FR4 Board, " v 10 sec)
Symbol
RthJA
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70778
S-55457—Rev. B, 09-Mar-98
N- or P- Channel
100
Unit
_C/W
www.vishay.com S FaxBack 408-970-5600
2-1
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