HAD825 Ver la hoja de datos (PDF) - Hi-Sincerity Microelectronics
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HAD825 Datasheet PDF : 3 Pages
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HI-SINCERITY
MICROELECTRONICS CORP.
HAD825
NPN EPITAXIAL PLANAR TRANSISTOR
Features
Darlington transistor.
Spec. No. : HE6406
Issued Date : 1994.01.13
Revised Date : 2002.03.06
Page No. : 1/3
Absolute Maximum Ratings
TO-92
• Maximum Temperatures
Storage Temperature ........................................................................................... -55 ~ +150 °C
Junction Temperature.................................................................................... +150 °C Maximum
• Maximum Power Dissipations
Total Power Dissipation (Ta=25°C) ............................................................................... 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 80 V
VCES Collector to Emitter Voltage ...................................................................................... 55 V
VEBO Emitter to Base Voltage............................................................................................ 12 V
IC Collector Current........................................................................................................ 600mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
80
-
BVCES
55
-
BVEBO
12
-
ICBO
-
-
IEBO
-
-
ICES
-
-
*VCE(sat)
-
-
*VCE(sat)
-
-
VBE(on)
-
-
*hFE1
10K
-
*hFE2
10K
-
fT
125
-
Cob
-
-
Max.
-
-
-
100
100
500
1.2
1.5
1.5
-
100K
-
8
Unit
Test Conditions
V
V
V
nA
nA
nA
V
V
V
MHz
pF
IC=100uA
IC=100uA
IE=10uA
VCB=60V
VEB=10V
VCE=60V
IC=10mA, IB=0.01mA
IC=100mA, IB=0.1mA
IC=100mA, VCE=5V
IC=10mA, VCE=5V
IC=100mA, VCE=5V
IC=10mA, VCE=5V f=100MHz
VCB=10V, f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HAD825
HSMC Product Specification
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