CS5124XDR8G Ver la hoja de datos (PDF) - ON Semiconductor
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CS5124XDR8G Datasheet PDF : 11 Pages
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CS5124
ELECTRICAL CHARACTERISTICS (continued) (−40°C ≤ TJ ≤ 125°C; −40°C ≤ TA ≤ 105°C, 7.60 V ≤ VCC ≤ 20 V, UVLO = 3.0 V,
ISENSE = 0 V, CV(CC) = 0.33 mF, CGATE = 1.0 nF (ESR = 10 W); CSS = 470 pF; CV(FB) = 100 pF, unless otherwise specified.)
Characteristic
Test Conditions
Min
Typ
Max
Unit
Soft−Start
Soft−Start Charge Current
−
Soft−Start Discharge Current
−
VSS Voltage when VFB Begins to
Rise
VFB = 300 mV
Peak Soft−Start Charge Voltage
−
Valley Soft−Start Discharge Voltage
−
7.0
10
13
mA
0.5
10.0
−
mA
1.40
1.62
1.80
V
4.7
4.9
−
V
200
275
400
mV
Current Sense
First Current Sense Threshold
At max duty cycle
170
195
215
mV
Second Current Sense Threshold
−
250
275
315
mV
ISENSE to GATE Prop. Delay
Leading Edge Blanking Time
Internal Offset
0 to 700 mV pulse into ISENSE (after blanking time)
60
0 to 400 mV pulse into ISENSE
90
Note 3
−
90
130
ns
130
180
ns
60
−
mV
Voltage Feedback
VFB Pull−up Res.
VFB Clamp Voltage
VFB Fault Voltage Threshold
Output Gate Drive
Maximum Sleep Pull−down Voltage
GATE High (AC)
GATE Low (AC)
GATE High Clamp Voltage
Rise Time
Fall TIme
Thermal Shutdown
Thermal Shutdown Temperature
Thermal Enable Temperature
Thermal Hysteresis
−
−
VCC = 6.0 V, IOUT = 1.0 mA
Series resistance < 1.0 W, (Note 3)
Series resistance < 1.0 W, (Note 3)
VCC = 20 V
Measure GATE rise time,
1.0 V < GATE < 9.0 V VCC = 12 V
Measure GATE fall time,
9.0 V > GATE > 1.0 V VCC = 12 V
(Note 3) GATE low
(Note 3) GATE switching
(Note 3)
2.9
4.3
8.1
kW
2.63
2.90
3.15
V
460
490
520
mV
−
1.2
2.0
V
VCC − 1.0 VCC − 0.5
−
V
−
0.0
0.5
V
11.0
13.5
16.0
V
−
45
65
ns
−
25
55
ns
135
150
165
°C
100
125
150
°C
15
25
35
°C
3. Not tested in production. Specification is guaranteed by design.
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