FQB8P10(2013) Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
FQB8P10 Datasheet PDF : 8 Pages
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Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
0.8
-100
※ Notes :
1. VGS = 0 V
2. ID = -250 μA
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs. Temperature
102
Operation in This Area
is Limited by R DS(on)
100 μs
1 ms
101
10 ms
DC
100
10-1
100
※ Notes :
1. TC = 25 oC
2. TJ = 175 oC
3. Single Pulse
101
102
-VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Notes :
1. VGS = -10 V
2. ID = -4.0 A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs. Temperature
10
8
6
4
2
0
25
50
75
100
125
150
175
TC, Case Temperature [℃]
Figure 10. Maximum Drain Current
vs. Case Temperature
100
D =0.5
0 .2
0 .1
0 .0 5
1 0 -1
0 .0 2
0 .0 1
sin g le p u lse
※ N otes :
1.
2.
3.
DZ θuJtCy(
TJM -
t) = 2.31 ℃ /W M
Fa
TC
ct
=
or,
PD
MD*=Zt 1θ/
t
2
JC
(
t
a
)
x
.
PDM
t1
t2
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S quare W ave P ulse D uration [sec]
Figure 11. Transient Thermal Response Curve
©2000 Fairchild Semiconductor Corporation
4
FQB8P10 Rev. C1
www.fairchildsemi.com
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