FQB8P10(2013) Ver la hoja de datos (PDF) - Fairchild Semiconductor
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FQB8P10 Datasheet PDF : 8 Pages
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Package Marking and Ordering Information
Part Number
FQB8P10TM
Top Mark
FQB8P10
Package
D2-PAK
Packing Method Reel Size
Tape and Reel 330 mm
Tape Width
24 mm
Quantity
800 units
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted.
Test Conditions
Min. Typ. Max. Unit
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250 μA
-100 --
ΔBVDSS Breakdown Voltage Temperature
/ ΔTJ
Coefficient
ID = -250 μA, Referenced to 25°C --
-0.1
IDSS
Zero Gate Voltage Drain Current
VDS = -100 V, VGS = 0 V
VDS = -80 V, TC = 150°C
--
--
--
--
IGSSF
Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V
--
--
IGSSR
Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V
--
--
--
--
-1
-10
-100
100
V
V/°C
μA
μA
nA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = -250 μA
VGS = -10 V, ID = -4.0 A
VDS = -40 V, ID = -4.0 A
-2.0 --
-4.0
V
-- 0.41 0.53
Ω
--
4.3
--
S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
-- 360 470 pF
-- 120 155 pF
--
30
40
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = -50 V, ID = -8.0 A,
RG = 25 Ω
--
11
30
ns
--
110 230
ns
--
20
50
ns
(Note 4)
--
35
80
ns
VDS = -80 V, ID = -8.0 A,
--
12
15
nC
VGS = -10 V
--
3.0
--
nC
(Note 4)
--
6.4
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = -8.0 A
trr
Reverse Recovery Time
VGS = 0 V, IS = -8.0 A,
Qrr
Reverse Recovery Charge
dIF / dt = 100 A/μs
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 3.5 mH, IAS = -8.0 A, VDD = -25 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ -8.0 A, di/dt ≤ 300 A/µs , VDD ≤ BVDSS, starting TJ = 25°C .
4. Essentially independent of operating temperature.
--
--
-8.0
A
--
--
-32
A
--
--
-4.0
V
--
98
--
ns
-- 0.35
--
μC
©2000 Fairchild Semiconductor Corporation
2
FQB8P10 Rev. C1
www.fairchildsemi.com
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