2SB1426 Ver la hoja de datos (PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd

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2SB1426

TO-92 Plastic-Encapsulate Transistors

Jiangsu Changjiang Electronics Technology Co., Ltd 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92 Plastic-Encapsulate Transistors

2SB1426 TRANSISTOR (PNP)

FEATURES

z General Purpose Switching and Amplification

TO – 92

1. EMITTER

2. BASE

3. COLLECTOR

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

VCBO

VCEO

VEBO

IC

PC

RθJA

Tj

Tstg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

Storage Temperature

Value

-20

-20

-6

-3

750

166

150

-55~+150

Unit

V

V

V

A

mW

℃/W

℃

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Collector output capacitance

Transition frequency

*Pulse test

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IEBO

hFE

VCE(sat) *

Cob

fT

Test conditions

IC= -0.05mA,IE=0

IC=-1mA,IB=0

IE=-0.05mA,IC=0

VCB=-20V,IE=0

VEB=-5V,IC=0

VCE=-2V, IC=-0.1A

IC=-2A,IB=-0.1A

VCB=-10V,IE=0, f=1MHz

VCE=-2V,IC=-0.5A, f=100MHz

Min Typ Max Unit

-20

V

-20

V

-6

V

-0.1 μA

-0.1 μA

82

390

-0.5 V

35

pF

240

MHz

CLASSIFICATION OF hFE

RANK

RANGE

P

82-180

Q

120-270

R

180-390

www.cj-elec.com

1

C,Dec,2015

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