SSS1004 Ver la hoja de datos (PDF) - Silikron Semiconductor Co.,LTD.
Número de pieza
componentes Descripción
Fabricante
SSS1004 Datasheet PDF : 8 Pages
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Main Product Characteristics
VDSS
100V
RDS(on) 3.7mΩ (typ.)
ID
180A ①
Features and Benefits
TO-220
Advanced Process Technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175℃ operating temperature
SSS1004
Marking and pin
Assignment
Schematic diagram
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute max Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current ②
Power Dissipation ③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=0.3mH
Avalanche Current @ L=0.3mH
Operating Junction and Storage Temperature Range
Max.
180 ①
130 ①
670
375
2.5
100
± 20
1045
83.5
-55 to +175
Units
A
W
W/°C
V
V
mJ
A
°C
©Silikron Semiconductor CO.,LTD.
2013.10.14
www.silikron.com
Version : 1.2
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