MP04HBN-16 Ver la hoja de datos (PDF) - Dynex Semiconductor

Número de pieza

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Fabricante

MP04HBN-16

Dual Thyristor, Thyristor/Diode Module

Dynex Semiconductor 

MP04---590

THERMAL AND MECHANICAL RATINGS

Symbol

Parameter

Rth(j-c)

Thermal resistance - junction to case

(per thyristor or diode)

R

th(c-hs)

Tvj

Tstg

-

Thermal resistance - case to heatsink

(per thyristor or diode)

Virtual junction temperature

Storage temperature range

Screw torque

-

Weight (nominal)

Test Conditions

dc

Half wave

3 Phase

Mounting torque = 5Nm

with mounting compound

Reverse (blocking)

-

Mounting - M6

Electrical connections - M10

-

Min. Max. Units

- 0.056 ˚C/kW

- 0.060 ˚C/kW

- 0.066 ˚C/kW

-

0.02 ˚C/kW

-

125

˚C

–40 130

˚C

- 6 (35) Nm (lb.ins)

- 12 (106) Nm (lb.ins)

-

1580

g

DYNAMIC CHARACTERISTICS - THYRISTOR

Symbol

Parameter

Test Conditions

Min. Max. Units

IRRM/IDRM Peak reverse and off-state current

At VRRM/VDRM, Tj = 125˚C

-

50 mA

dV/dt Linear rate of rise of off-state voltage

To 67% VDRM, Tj = 125˚C

-

1000 V/µs

dI/dt Rate of rise of on-state current

From 67% VDRM to 1500A, gate source 1.5A,

-

500 A/µs

tr = 0.5µs, Tj = 125˚C

VT(TO)

Threshold voltage

At Tvj = 125˚C. See note 1

-

0.85 V

rT

On-state slope resistance

At T = 125˚C. See note 1

vj

-

0.38 mΩ

Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the

semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these

figures due to the impedance of the busbar from the terminal to the semiconductor.

3/10

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