MRF148A Ver la hoja de datos (PDF) - Tyco Electronics
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MRF148A Datasheet PDF : 6 Pages
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SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field-Effect Transistor
N–Channel Enhancement–Mode
Designed for power amplifier applications in industrial, commercial and
amateur radio equipment to 175 MHz.
• Superior High Order IMD
• Specified 50 Volts, 30 MHz Characteristics
Output Power = 30 Watts
Power Gain = 18 dB (Typ)
Efficiency = 40% (Typ)
• IMD(d3) (30 W PEP) — – 35 dB (Typ)
• IMD(d11) (30 W PEP) — – 60 dB (Typ)
• 100% Tested For Load Mismatch At All Phase Angles With
30:1 VSWR
• Lower Reverse Transfer Capacitance (3.0 pF Typical)
D
Order this document
by MRF148/D
MRF148A
30 W, to 175 MHz
N–CHANNEL MOS
LINEAR RF POWER
FET
G
S
CASE 211–07, STYLE 2
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
VDSS
VDGO
VGS
ID
PD
Tstg
TJ
Symbol
RθJC
Value
120
120
± 40
6.0
115
0.66
– 65 to +150
200
Max
1.52
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Replaces MRF148/D
1
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