HYB3164165BT-40 Ver la hoja de datos (PDF) - Infineon Technologies

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Fabricante

HYB3164165BT-40

4M x 16-Bit Dynamic RAM (8k, 4k & 2k Refresh, EDO-version)

Infineon Technologies 

HYB3164(5/6)165BT(L)-40/-50/-60

4M x 16 EDO-DRAM

DC-Characteristics (contd’ )

TA = 0 to 70 °C, VSS = 0 V, VCC = 3.3 V ± 0.3 V

Parameter

Symbol

Operating Current

ICC1

-40 ns version

-50 ns version

-

-60 ns version

(RAS, CAS, address cycling: tRC = tRC min.)

Standby Current (RAS=CAS= Vih)

ICC2

RASOnlyRefresh Current:

-

ICC3

-40 ns version

-50 ns version

-60 ns version

(RAS cycling: CAS = VIH: tRC = tRC min.)

Hyper Page Mode (EDO) Current:

ICC4

-40 ns version

-50 ns version

-60 ns version

(RAS = VIL, CAS, address cycling: tHPC=tHPC min.)

Standby Current (RAS=CAS= Vcc-0.2V)

ICC5

Standby Current (L-Version)

ICC5

(RAS=CAS= Vcc-0.2V)

CAS Before RAS Refresh Current

ICC6

-40 ns version

-50 ns version

-60 ns version

(RAS, CAS cycling: tRC = tRC min.)

Self Refresh Current (L-version only)

ICC7

(CBR cycle with tRAS>TRASSmin, CAS held low,

WE = Vcc-0.2V, Address and Din=Vcc-0.2V or 0.2V)

refresh version

2k

4k

8k

240 135 85

195 110 70

155 90

60

2

2

2

240 135 85

195 110 70

155 90

60

100 100 100

65

65

65

45

45

45

1

1

1

200 200 200

240 135 85

195 110 70

155 90

60

400 400 400

Unit Note

mA 2) 3)

mA 4)

mA

mA –

mA 2) 4)

mA

mA

mA 2) 3)

mA 4)

mA

mA –

µA –

mA 2) 4)

mA

mA

µA

Capacitance

TA = 0 to 70 °C,VCC = 3.3 V ± 0.3 V, f = 1 MHz

Parameter

Symbol

Limit Values

Unit

min.

max.

Input capacitance (A0 to A11,A12)

Input capacitance (RAS, CAS, WE, OE)

I/O capacitance (I/O1-I/O16)

CI1

–

5

pF

CI2

–

7

pF

CIO

–

7

pF

Semiconductor Group

9

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