MRF137 Ver la hoja de datos (PDF) - Advanced Semiconductor

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MRF137

RF POWER FIELD-EFFECT TRANSISTOR

Advanced Semiconductor 

MRF137

RF POWER FIELD-EFFECT TRANSISTOR

DESCRIPTION:

The ASI MRF137 is a N-Channel

Enhancement MOSFET, Designed for

Wideband Large Signal Output and

Driver Stage Applications up to

400 MHz.

MAXIMUM RATINGS

ID

5.0 A

VDSS

65 V

PDISS

100 W @ TC = 25 °C

TJ

-65 °C to +200 °C

TSTG

-65 °C to +150 °C

θJC

1.75 °C/W

PACKAGE STYLE

1 = DRAIN 2 = GATE

3 & 4 = SOURCE

CHARACTERISTICS TC = 25 °C

SYMBOL

TEST CONDITIONS

V(BR)DSS

ID = 10 mA

VGS = 0 V

IDSS

VDS = 28 V

VGS = 0 V

IGSS

VDS = 0 V

VGS = 20 V

VGS(th)

ID = 25 mA

VDS = 10 V

gfs

ID = 500 mA

VDS = 10 V

Ciss

Coss

Crss

VDS = 28 V

VGS = 0 V

f = 1.0 MHz

NF

VDS = 28 V

ID = 1.0 A

f = 150 MHz

Gps

VDD = 28 V

Pout = 30 W

η

IDQ = 25 mA

f = 150 MHz

ψ

VDD = 28 V

Pout = 30 W

f = 150 MHz

IDQ = 25 mA VSWR 30:1 @ ALL PHASE ANGLES

MINIMUM TYPICAL MAXIMUM

65

4.0

1.0

1.0

3.0

6.0

500

750

UNITS

V

mA

µA

V

mmhos

48

45

pF

11

1.5

dB

12

16

dB

50

60

%

NO DEGRADATION IN OUTPUT POWER

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

REV. A

1/1

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