SGH15N120RUF Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
SGH15N120RUF Datasheet PDF : 7 Pages
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1000
Eoff
Eoff
Eon
100
5
Common Emitter
V = ± 15V, R = 20Ω
GE
G
T = 25℃
C
T = 125℃
C
10
15
20
25
30
Collector Current, IC [A]
Fig 13. Switching Loss vs. Collector Current
16
Common Emitter
14
R = 40Ω
L
T = 25℃
C
12
600V
10
400V
8
6
VCC = 200V
4
2
0
0
10 20 30 40 50 60 70 80
Gate charge, Qg [nC]
Fig 14. Gate Charge Characteristics
100
IC MAX. (Pulsed)
I MAX. (Continuous)
C
10
50µs
100µs
1ms
DC Operation
1
Single Nonrepetitive
0.1 Pulse T = 25℃
C
Curves must be derated
linearly with increase
in temperature
0.01
0.1
1
10
100
Collector - Emitter Voltage, VCE [V]
1000
Fig 15. SOA Characteristics
10
Safe Operating Area
VGE = 20V, TC = 100℃
1
1
10
100
1000
Collector - Emitter Voltage, VCE [V]
Fig 16. Turn-Off SOA
10
1
0.5
0.2
0.1 0.1
0.05
0.02
0.01 0.01
1E-3
10-5
single pulse
10-4
10-3
10-2
10-1
Rectangular Pulse Duration [sec]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
100
101
©2002 Fairchild Semiconductor Corporation
Fig 17. Transient Thermal Impedance of IGBT
SGH15N120RUF Rev. B2
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