WS1M8-70CI Ver la hoja de datos (PDF) - White Electronic Designs => Micro Semi
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WS1M8-70CI Datasheet PDF : 5 Pages
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White Electronic Designs
WS1M8-XCX
PRELIMINARY
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol Min Max Unit
Operating Temperature
TA
-55 +125 °C
Storage Temperature
TSTG -65 +150 °C
Signal Voltage Relative to GND
VG
-0.5 VCC+0.5 V
Junction Temperature
TJ
150
°C
Supply Voltage
VCC
-0.5
7.0
V
CS# WE#
H
X
L
H
L
L
TRUTH TABLE
Mode
Standby
Read
Write
Data I/O
High Z
Data Out
Data In
Power
Standby
Active
Active
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Opertating Temp. (MIL)
Symbol
VCC
VIH
VIL
TA
Min
Max
Unit
4.5
5.5
V
2.2 VCC + 0.3
V
-0.3
+0.8
V
-55
+125
°C
CAPACITANCE
TA = +25°C
Parameter
Input capacitance
Output capacitance
Symbol
Conditions
Max Unit
CIN VIN = 0V, f = 1.0 MHz 28 pF
COUT VOUT = 0V, f = 1.0 MHz 28 pF
This parameter is guaranteed by design but not tested.
DC CHARACTERISTICS
VCC = 5.0V, VSS = 0V, -55°C ≤ TA ≤ +125°C
Parameter
Input Leakage Current
Output Leakage Current
Operating Supply Current
Standby Current
Output Low Voltage
Output High Voltage
Sym
Conditions
Min
ILI
VCC = 5.5, VIN = GND to VCC
ILO1
CS# = VIH, VOUT = GND to VCC
ICC1
CS# = VIL, f = 5MHz, VCC = 5.5
ISB1
CS# = VIH, f = 5MHz, VCC = 5.5
VOL
IOL = 2.1mA
VOH
IOH = -1.0mA
2.4
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V
1. OE# is internally tied to GND.
Max
Units
10
µA
10
µA
55
mA
2
mA
0.4
V
V
DATA RETENTION CHARACTERISTICS
-55°C ≤ TA ≤ +125°C
Characteristic
Data Retention Supply Voltage
Data Retention Current
Sym
VDR
ICCDR1
Conditions
CS# ≥ VCC -0.2V
VCC = 3V
Min
Typ
2.0
150
* Also available in Low Power version. Please call factory for informaion.
Max
Units
5.5
V
800*
µA
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
November 2002
Rev. 2
2
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com
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