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ZVN2110G Ver la hoja de datos (PDF) - Diodes Incorporated.

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ZVN2110G Datasheet PDF : 6 Pages
1 2 3 4 5 6
ABSOLUTE MAXIMUM RATINGS (@TA = +25°C, unless otherwise stated.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Operating and Storage Temperature Range
Symbol
VDSS
VGSS
ID
IDM
PD
TJ, TSTG
Value
100
±20
500
6
2
-55 to +150
ZVN2110G
Unit
V
V
mA
A
W
°C
ELECTRICAL CHARACTERISTICS (@TA = +25°C, unless otherwise stated.)
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Symbol Min Typ Max
BVDSS
100
-
-
IDSS
-
-
1
100
Gate-Body Leakage
On-State Drain Current (Note 5)
ON CHARACTERISTICS
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance (Note 5)
Forward Transconductance (Notes 5 & 6)
DYNAMIC CHARACTERISTICS
Input Capacitance (Note 6)
Common Source Output Capacitance (Note 6)
Reverse Transfer Capacitance (Note 6)
Turn-On Delay Time (Notes 6 & 7)
Rise Time (Notes 6 & 7)
Turn-Off Delay Time (Notes 6 & 7)
Fall Time (Notes 6 & 7)
IGSS
-
0.1
20
ID(ON)
1.5
2
-
VGS(TH)
0.8
-
2.4
RDS(ON)
-
-
4
gfs
250 350
-
Ciss
-
59
75
Coss
-
16
25
Crss
-
4
8
tD(ON)
-
4
7
tR
-
4
8
tD(OFF)
-
8
13
tF
-
8
13
Unit
Test Condition
V VGS = 0V, ID = 1mA
µA VDS = 100V, VGS = 0V
µA VDS = 80V, VGS = 0V, T=
+125°C(6)
nA VGS = ±20V, VDS = 0V
A VGS = 10V, VDS = 25V
V VDS = VGS, ID = 1mA
Ω VGS = 10V, ID =1A
mS VDS = 25V, ID = 1A
pF
pF
VDS = 25V, VGS = 0V,
f = 1.0MHz
pF
ns
ns
ns VDD = 25V, ID = 1A
ns
DRAIN-SOURCE DIODE CHARACTERISTICS
Characteristic
Diode Forward Voltage (Note 5)
Reverse Recovery Time
Symbol Min Typ Max Unit
Test Condition
VSD
-
0.82
-
V IS=0.32A, VGS=0
TRR
-
112
-
ns IF=0.32A, VGS=0, IR=0.1A
Notes:
5. Measured under pulsed conditions. Width=300s. Duty cycle 2%.
6. Sample test.
7. Switching times measured with 50source impedance and <5ns rise time on a pulse generator.
ZVN2110G
Document number: DS33350 Rev. 4 - 2
2 of 6
www.diodes.com
February 2015
© Diodes Incorporated

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