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componentes Descripción
Fabricante
BLF884P Datasheet PDF : 15 Pages
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BLF884P; BLF884PS
UHF power LDMOS transistor
5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter
Conditions
Rth(j-c) thermal resistance from junction to case Tcase = 80 C; PL(AV) = 70 W
[1] Rth(j-c) is measured under RF conditions.
Typ Unit
[1] 0.22 K/W
6. Characteristics
Table 6. DC characteristics
Tj = 25 C; per section unless otherwise specified.
Symbol Parameter
Conditions
V(BR)DSS
VGS(th)
IDSS
IDSX
drain-source breakdown voltage
gate-source threshold voltage
drain leakage current
drain cut-off current
IGSS
gate leakage current
RDS(on) drain-source on-state resistance
Ciss
input capacitance
VGS = 0 V; ID = 1.2 mA
VDS = 10 V; ID = 120 mA
VGS = 0 V; VDS = 50 V
VGS = VGS(th) + 3.75 V;
VDS = 10 V
VGS = 10 V; VDS = 0 V
VGS = VGS(th) + 3.75 V;
ID = 4.25 A
VGS = 0 V; VDS = 50 V;
f = 1 MHz
Coss
output capacitance
VGS = 0 V; VDS = 50 V;
f = 1 MHz
Crss
reverse transfer capacitance
VGS = 0 V; VDS = 50 V;
f = 1 MHz
Min Typ
[1] 104 -
[1] 1.4 1.9
--
- 19
--
[1] -
240
[2] -
105
- 34
- 0.7
Max Unit
-V
2.4 V
1.4 A
-A
140 nA
- m
- pF
- pF
- pF
[1] ID is the drain current.
[2] Capacitance values without internal matching.
Table 7. RF characteristics
RF characteristics in Ampleon production narrowband test circuit; Tcase = 25 C unless otherwise
specified.
Symbol Parameter
Conditions
Min Typ Max Unit
2-Tone, class-AB
VDS
IDq
PL(AV)
Gp
D
IMD3
drain-source voltage
quiescent drain current
average output power
power gain
drain efficiency
third-order intermodulation distortion
f1 = 860 MHz;
f2 = 860.1 MHz
f1 = 860 MHz;
f2 = 860.1 MHz
f1 = 860 MHz;
f2 = 860.1 MHz
f1 = 860 MHz;
f2 = 860.1 MHz
- 50 -
V
[1] -
0.65 -
A
150 - -
W
20 21 -
dB
42 46 -
%
- 32 28 dBc
BLF884P_BLF884PS#3
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
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