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ZVN3306F

SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Zetex => Diodes 

SOT23 N-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ISSUE 3 – JANUARY 1996

FEATURES

* RDS(on)= 5Ω

* 60 Volt VDS

COMPLEMENTARY TYPE - ZVP3306F

PARTMARKING DETAIL - MC

ZVN3306F

S

D

G

ABSOLUTE MAXIMUM RATINGS.

SOT23

PARAMETER

SYMBOL

VALUE

UNIT

Drain-Source Voltage

VDS

60

V

Continuous Drain Current at Tamb=25°C

ID

150

mA

Pulsed Drain Current

IDM

3

A

Gate-Source Voltage

VGS

± 20

V

Power Dissipation at Tamb=25°C

Ptot

330

mW

Operating and Storage Temperature Range Tj:Tstg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN. MAX. UNIT CONDITIONS.

Drain-Source

Breakdown Voltage

BVDSS

60

V

ID=1mA, VGS=0V

Gate-Source Threshold

Voltage

VGS(th)

0.8

2.4

V

ID=1mA, VDS= VGS

Gate-Body Leakage

IGSS

20

Zero Gate Voltage

IDSS

0.5

Drain Current

50

On-State Drain Current(1)

ID(on)

750

Static Drain-Source On-State RDS(on)

5

Resistance (1)

nA VGS=± 20V, VDS=0V

µA VDS=60V, VGS=0V

µA VDS=48V, VGS=0V, T=125°C(2)

mA VDS=18V, VGS=10V

Ω

VGS=10V, ID=500mA

Forward Transconductance gfs

150

(1)(2)

mS VDS=18V, ID=500mA

Input Capacitance (2)

Ciss

Common Source

Coss

Output Capacitance (2)

35

pF

25

pF VDS=18V, VGS=0V, f=1MHz

Reverse Transfer Capacitance Crss

(2)

8

pF

Turn-On Delay Time (2)(3)

td(on)

3 typ 5

ns

Rise Time (2)(3)

Turn-Off Delay Time (2)(3)

tr

td(off)

4 typ 7

4 typ 6

ns

VDD ≈18V, ID=500mA

ns

Fall Time (2)(3)

tf

5 typ 8

ns

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.

(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator

Spice parameter data is available upon request for this device

3 - 393

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