ZVN1409A Ver la hoja de datos (PDF) - Zetex => Diodes

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componentes Descripción

Fabricante

ZVN1409A

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Zetex => Diodes 

N-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ISSUE 2 – MARCH 94

FEATURES

* 90 Volt VDS

* Low input capacitance

* Fast switching

ZVN1409A

D

G

S

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Drain-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Gate Source Voltage

Power Dissipation at Tamb=25°C

Operating and Storage Temperature Range

SYMBOL

VDS

ID

IDM

VGS

Ptot

Tj:Tstg

E-Line

TO92 Compatible

VALUE

90

10

40

± 20

625

-55 to +150

UNIT

V

mA

mA

V

mW

°C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN. MAX. UNIT CONDITIONS.

Drain-Source Breakdown

Voltage

BVDSS

90

V

ID=0.1mA, VGS=0V

Gate-Source Breakdown

Voltage

VGS(th)

0.8

2.4

V

ID=0.1mA, VDS= VGS

Gate Body Leakage

Zero Gate Voltage Drain

Current

IGSS

IDSS

100 nA

1

µA

100 (2) µA

VGS=± 20V, VDS=0V

VDS=90V, VGS=0V

VDS=72V, VGS=0V,

T=125°C

On State Drain Current (1)

ID(on)

10

Static Drain Source On State RDS(on)

Resistance (1)

mA

VDS=25 V, VGS=10V

250 Ω

VGS=10V,ID=5mA

Forward Transconductance (1)( gfs

2

2)

mS VDS=25V,ID=10mA

Input Capacitance (2)

Common Source Output

Capacitance (2)

Ciss

Coss

6.5 pF

3

pF

VDS=25 V, VGS=0V

f=1MHz

Reverse Transfer Capacitance Crss

(2)

0.65 pF

Turn-On Delay Time (2)(3)(4) td(on)

0.3 ns

Rise Time (2)(3)(4)

Turn-Off Delay Time (2)(3)(4)

tr

td(off)

0.5 ns

0.35 ns

VDD ≈25V, ID=5mA

Fall Time (2)(3)(4)

tf

0.5 ns

3-358

(

1

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