1PS79SB10 Ver la hoja de datos (PDF) - Philips Electronics
Número de pieza
componentes Descripción
Fabricante
1PS79SB10 Datasheet PDF : 8 Pages
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Philips Semiconductors
Schottky barrier diode
GRAPHICAL DATA
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IF
(mA)
10 2
(1) (2) (3)
MSA892
10
(1) (2) (3)
1
10 1
0
0.4
0.8
1.2
VF (V)
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
Fig.2 Forward current as a function of forward
voltage; typical values.
Product specification
1PS79SB10
10 3
IR
(µA)
10 2
10
MSA893
(1)
(2)
1
(3)
10 1
0
10
20 VR (V) 30
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
Fig.3 Reverse current as a function of reverse
voltage; typical values.
15
Cd
(pF)
10
MSA891
5
0
0
10
20 V R (V) 30
f = 1 MHz; Tamb = 25 °C.
Fig.4 Diode capacitance as a function of reverse
voltage; typical values.
1998 Jul 16
4
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