DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

BGD816L Ver la hoja de datos (PDF) - NXP Semiconductors.

Número de pieza
componentes Descripción
Fabricante
BGD816L Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
NXP Semiconductors
860 MHz, 21.5 dB gain power doubler
amplifier
Product specification
BGD816L
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
CSO
d2
Vo
NF
Itot
composite second
79 chs flat; Vo = 44 dBmV; fm = 548.5 MHz
66 dB
order distortion
112 chs flat; Vo = 44 dBmV; fm = 746.5 MHz
58 dB
132 chs flat; Vo = 44 dBmV; fm = 860.5 MHz
56 dB
112 chs; fm = 210.0 MHz; Vo = 48.2 dBmV at
57 dB
745 MHz; note 2
79 chs; fm = 210.0 MHz; Vo = 45.3 dBmV at
64 dB
547 MHz; note 3
second order distortion note 4
70 dB
output voltage
dim = 60 dB; note 5
CTB compression = 1 dB; 132 chs flat;
f = 859.25 MHz
62
dBmV
48
dBmV
CSO compression = 1 dB; 132 chs flat;
f = 860.5 MHz
49
dBmV
noise figure
f = 50 MHz
5.5 dB
f = 550 MHz
5.5 dB
f = 750 MHz
6.5 dB
f = 870 MHz
7.5 dB
total current
consumption (DC)
note 6
345 360 375 mA
Notes
1. Slope straight line is defined as gain at 870 MHz against gain at 45 MHz.
2. Tilt = 10.2 dB (55 to 745 MHz).
3. Tilt = 7.3 dB (55 to 547 MHz).
4. fp = 55.25 MHz; Vp = 44 dBmV;
fq = 805.25 MHz; Vq = 44 dBmV;
measured at fp + fq = 860.5 MHz.
5. Measured according to DIN45004B:
fp = 851.25 MHz; Vp = Vo;
fq = 858.25 MHz; Vq = Vo 6 dB;
fr = 860.25 MHz; Vr = Vo 6 dB;
measured at fp + fq fr = 849.25 MHz.
6. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 35 V.
2001 Nov 15
4

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]