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BT139B-600,118 Datasheet PDF : 13 Pages
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NXP Semiconductors
BT139-600
4Q Triac
9. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 7
IL
latching current
VD = 12 V; IG = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 8
IH
holding current
VD = 12 V; Tj = 25 °C; Fig. 9
VT
on-state voltage
IT = 20 A; Tj = 25 °C; Fig. 10
VGT
gate trigger voltage
VD = 12 V; IT = 0.1 A; Tj = 25 °C;
Fig. 11
VD = 400 V; IT = 0.1 A; Tj = 125 °C;
Fig. 11
ID
off-state current
VD = 600 V; Tj = 125 °C
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
VDM = 402 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
dVcom/dt
rate of change of
commutating voltage
VD = 400 V; Tj = 95 °C; dIcom/dt = 7.2 A/
ms; IT = 16 A; gate open circuit
tgt
gate-controlled turn-on ITM = 20 A; VD = 600 V; IG = 0.1 A; dIG/
time
dt = 5 A/µs
Min Typ Max Unit
-
5
35
mA
-
8
35
mA
-
10
35
mA
-
22
70
mA
-
7
40
mA
-
20
60
mA
-
8
40
mA
-
10
60
mA
-
6
45
mA
-
1.2 1.6 V
-
0.7 1
V
0.25 0.4 -
V
-
0.1 0.5 mA
200 250 -
V/µs
10
20
-
-
2
-
V/µs
µs
BT139-600
Product data sheet
All information provided in this document is subject to legal disclaimers.
27 September 2013
© NXP N.V. 2013. All rights reserved
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