BT139B-600 Ver la hoja de datos (PDF) - NXP Semiconductors.

Número de pieza

componentes Descripción

Fabricante

BT139B-600

4Q Triac

NXP Semiconductors. 

NXP Semiconductors

7. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

VDRM

repetitive peak off-state voltage

IT(RMS)

RMS on-state current

full sine wave; Tmb ≤ 99 °C; Fig. 1;

Fig. 2; Fig. 3

ITSM

non-repetitive peak on-state full sine wave; Tj(init) = 25 °C;

current

tp = 20 ms; Fig. 4; Fig. 5

full sine wave; Tj(init) = 25 °C;

tp = 16.7 ms

I2t

I2t for fusing

tp = 10 ms; SIN

dIT/dt

rate of rise of on-state current IT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;

T2+ G+

IT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;

T2+ G-

IT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;

T2- G-

IT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;

T2- G+

IGM

peak gate current

PGM

peak gate power

PG(AV)

average gate power

over any 20 ms period

Tstg

storage temperature

Tj

junction temperature

BT139-600

4Q Triac

Min Max Unit

-

600 V

-

16

A

-

155 A

-

170 A

-

120 A2s

-

50

A/µs

-

50

A/µs

-

50

A/µs

-

10

A/µs

-

2

A

-

5

W

-

0.5 W

-40 150 °C

-

125 °C

BT139-600

Product data sheet

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27 September 2013

© NXP N.V. 2013. All rights reserved

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