Philips Semiconductors
UHF wideband transistor
Product specification
PBR941
FEATURES
• Small size
• Low noise
• Low distortion
• High gain
• Gold metallization ensures excellent reliability.
PINNING - SOT23
PIN
1 base
2 emitter
3 collector
DESCRIPTION
APPLICATIONS
• Communication and instrumentation systems.
DESCRIPTION
Silicon NPN transistor in a surface mount 3-pin SOT23
package. The transistor is primarily intended for wideband
applications in the GHz-range in the RF front end of analog
and digital cellular telephones, cordless phones, radar
detectors, pagers and satellite TV-tuners.
handbook, halfpage
3
3
1
1
Top view
Marking code: V0.
2
2
MAM255
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
Cre
feedback capacitance
fT
transition frequency
GUM
maximum unilateral power gain
F
noise figure
Ptot
Rth j-s
total power dissipation
thermal resistance from junction
to soldering point
CONDITIONS
IC = 0; VCB = 6 V; f = 1 MHz
IC = 15 mA; VCE = 6 V; fm = 1 GHz
IC = 15 mA; VCE = 6 V; f = 1 GHz;
Tamb = 25 °C
ΓS = Γopt; IC = 5 mA; VCE = 6 V;
f = 1 GHz
Ts = 60 °C; note 1
Ptot = 360 mW
Note
1. Ts is the temperature at the soldering point of the collector pin.
TYP.
0.3
8
15
MAX.
−
−
−
UNIT
pF
GHz
dB
1.4
−
dB
−
360 mW
−
320 K/W
1998 Aug 10
2