2SC5239 Ver la hoja de datos (PDF) - New Jersey Semiconductor
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2SC5239 Datasheet PDF : 2 Pages
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Unc.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SC5239
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEo= 550V(Min)
• High Switching Speed
APPLICATIONS
• Designed for switching regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
900
V
VCEO Collector-Emitter Voltage
550
V
VEBO Emitter-Base Voltage
7
V
Ic
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
6
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@TC=25°C
Tj
Junction Temperature
Tstg
Storage Temperature
1.5
A
50
W
150
•c
-55-150
•c
^' '^* *r
\2 3
2
<!
3
PIN 1.BASE
2. COLLECTOR
3. EMITTER
TO-220C package
- BH
-« V H I- '
r
Ui ^CT'Ej
1'
A
t
T 1 10.00'-
Of 1 H ] .
K
t
rr,**** 0
4
f
** H J
C
1
r
mm
DIM WIN MAX
A 15.70 15.90
B 9.90 10.10
C 4.20 4.40
D 0.70 0.90
F 3.40 3.60
G 4.98 5.18
H 2.70 2.90
J 0.44 0.46
K 13.20 13.40
L 1.10 1.30
U 2.70 2.90
R 2.50 2.70
S 1.29 1.31
U 6.45 6.65
V 8.66 8.86
N.I Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions \\ithout
notice. Information furnished by N.I Semi-Conductors is believed to he both nccurnte und reliable nl the time ot'f.oing
to press. I Kmeser. N.I Semi-Coiiductors assumes no rosponsihiliu lor an> errors or omissions discovered in its use.'
N.I Scmi-C'ondiictors eneourages customers to verily that datasheet are eurrenl befoiv plncinji orders.
Qualiry Semi-Conductors
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