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BFR92A

NPN 5 GHz wideband transistor

Philips Electronics 

Philips Semiconductors

NPN 5 GHz wideband transistor

Product specification

BFR92A

FEATURES

• High power gain

• Low noise figure

• Low intermodulation distortion.

APPLICATIONS

• RF wideband amplifiers and

oscillators.

DESCRIPTION

NPN wideband transistor in a plastic page

3

SOT23 package.

PNP complement: BFT92.

PINNING

PIN

DESCRIPTION

1 base

2 emitter

3 collector

1

Top view

2

MSB003

Marking code: P2p.

Fig.1 SOT23.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

VCBO

VCEO

IC

Ptot

Cre

fT

GUM

collector-base voltage

collector-emitter voltage

collector current (DC)

total power dissipation

feedback capacitance

transition frequency

maximum unilateral power gain

F

noise figure

VO

output voltage

CONDITIONS

Ts ≤ 95 °C

IC = ic = 0; VCE = 10 V; f = 1 MHz

IC = 15 mA; VCE = 10 V; f = 500 MHz

IC = 15 mA; VCE = 10 V; f = 1 GHz;

Tamb = 25 °C

IC = 15 mA; VCE = 10 V; f = 2 GHz;

Tamb = 25 °C

IC = 5 mA; VCE = 10 V; f = 1 GHz;

Γs = Γopt; Tamb = 25 °C

dim = −60 dB; IC = 14 mA; VCE = 10 V;

RL = 75 Ω; fp + fq − fr = 793.25 MHz

TYP.

−

−

−

−

0.35

5

14

8

2.1

150

MAX.

20

15

25

300

−

−

−

UNIT

V

V

mA

mW

pF

GHz

dB

−

dB

−

dB

−

mV

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

VCBO

VCEO

VEBO

IC

Ptot

Tstg

Tj

collector-base voltage

collector-emitter voltage

emitter-base voltage

collector current (DC)

total power dissipation

storage temperature

junction temperature

CONDITIONS

open emitter

open base

open collector

Ts ≤ 95 °C; note 1; see Fig.3

Note

1. Ts is the temperature at the soldering point of the collector pin.

MIN.

−

−

−

−

−

−65

−

MAX.

20

15

2

25

300

+150

175

UNIT

V

V

V

mA

mW

°C

°C

1997 Oct 29

2

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