IRFE130 Ver la hoja de datos (PDF) - Semelab - > TT Electronics plc

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IRFE130

N–CHANNEL POWER MOSFET

Semelab - > TT Electronics plc  

IRFE130

MECHANICAL DATA

Dimensions in mm (inches)

N–CHANNEL

POWER MOSFET

1.27 (0.050)

1.07 (0.040)

11

7.62 (0.300) 10

7.12 (0.280)

9

8

9.14 (0.360)

8.64 (0.340)

12 13 14 15 16

1.39 (0.055)

1.02 (0.040)

17

18

1

2

0.76 (0.030)

0.51 (0.020)

76543

1.39 (0.055)

1.15 (0.045)

1.65 (0.065)

1.40 (0.055)

0.33

0.08

(0.013)

(0.003)

Rad.

0.43 (0.017)

0.18 (0.007 Rad.

≈ 2.16 (0.085)

MOSFET

GATE

DRAIN

SOURCE

LCC4

TRANSISTOR

BASE

COLLECTOR

EMITTER

PINS

4,5

1,2,15,16,17,18

6,7,8,9,10,11,12,13

VDSS

ID(cont)

RDS(on)

100V

7.44A

0.207Ω

FEATURES

• SURFACE MOUNT

• SMALL FOORPRINT

• HERMETICALLY SEALED

• DYNAMIC dv/dt RATING

• AVALANCHE ENERGY RATING

• SIMPLE DRIVE REQUIREMENTS

• LIGHTWEIGHT

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)

VGS

Gate – Source Voltage

±20V

ID

Continuous Drain Current

(VGS = 10V , Tcase = 25°C)

7.4A

ID

Continuous Drain Current

(VGS = 10V , Tcase = 100°C)

4.7A

IDM

Pulsed Drain Current 1

30A

PD

Power Dissipation @ Tcase = 25°C

22W

Linear Derating Factor

0.17W/°C

EAS

dv/dt

Single Pulse Avalanche Energy 2

Peak Diode Recovery 3

75mJ

5.5V/ns

TJ , Tstg

Operating and Storage Temperature Range

Surface Temperature ( for 5 sec).

-55 to +150°C

300°C

Notes

1) Pulse Test: Pulse Width ≤ 300µs, δ ≤ 2%

2) @ VDD = 50V , L ≥ 570µH , RG = 25Ω , Peak IL = 14A , Starting TJ = 25°C

3) @ ISD ≤ 14A , di/dt ≤ 140A/µs , VDD ≤ BVDSS , TJ ≤ 150°C , Suggested RG = 7.5Ω

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk

Website http://www.semelab.co.uk

10/98

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