BFR182W Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

BFR182W

Low Noise Silicon Bipolar RF Transistor

Infineon Technologies 

BFR182W

Electrical Characteristics at TA = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 1 mA, IB = 0

Collector-emitter cutoff current

VCE = 4 V, VBE = 0

VCE = 15 V, VBE = 0 V, TA = 85 °C

(verified by random sampling)

V(BR)CEO 12

-

-V

ICES

nA

-

1

30

-

5

70

Collector-base cutoff current

VCB = 4 V, IE = 0

Emitter-base cutoff current

VEB = 1 V, IC = 0

DC current gain

IC = 10 mA, VCE = 8 V, pulse measured

ICBO

IEBO

hFE

-

1

30

-

-

50

70 100 140 -

2

2014-04-07

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