BFR182W(2001) Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

BFR182W
(Rev.:2001)

NPN Silicon RF Transistor

Infineon Technologies 

NPN Silicon RF Transistor

For low noise, high-gain broadband amplifiers at

collector currents from 1 mA to 20 mA

fT = 8 GHz

F = 1.2 dB at 900 MHz

BFR182W

3

2

1

VSO05561

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type

BFR182W

Marking

RGs

Pin Configuration

1=B

2=E

3=C

Package

SOT323

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Base current

Total power dissipation

TS
90 °C 1)

Junction temperature

Ambient temperature

Storage temperature

Symbol

VCEO

VCES

VCBO

VEBO

IC

IB

Ptot

Tj

TA

Tstg

Value

Unit

12

V

20

20

2

35

mA

4

250

mW

150

°C

-65 ... 150

-65 ... 150

Thermal Resistance

Junction - soldering point2)

RthJS

240

K/W

1TS is measured on the collector lead at the soldering point to the pcb

2For calculation of RthJA please refer to Application Note Thermal Resistance

1

Aug-09-2001

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