2SA886 Ver la hoja de datos (PDF) - New Jersey Semiconductor
Número de pieza
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Fabricante
2SA886 Datasheet PDF : 1 Pages
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One.
Power Transistors
2SA886
Silicon PNP epitaxial planar type
For low-frequency power amplification
Complementary to 2SC1 847
• Features
• Output of 4 W can be obtained by a complementary pair with
2SC1847
• TO-126B package which requires no insulation plate for installa-
tion to the heal sink
• Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) CBO
3"
v
Collector-emitter voltage (Base open) VCEO
-40
V
Emitter-base voltage (Collector open) VF,i,o
-5
V
Collector current
I(
-1. 5
A
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
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CO
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4
q
O
CD
('nil: mm
3.2±o.a
m%
o
r rt
0.7&I
0.5±o.i 1.76±o.i
2.3±o.2
; KmittLT
f ')
2: CttlltvUH
.V Base
TO-126B-AI hickiige
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Kmitla-hase cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter sulurution voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
VCBO
VCEO
'CHO
'n-o
'EIIO
hFK
VfF,,,,,
^BKlKill
fj
c,*
Conditions
!(. = -! mA, 1,: = 0
Ic. = -2 inA, Tn = 0
VrB = -20V.IE = 0
Vrr. = - I O V . I B = 0
VEI) = -5V,V = 0
VCE = -5V. It- = -l A
If = -1.5 A, I,, = -0.15 A
It. = ~2 A, Tu = - 0.2A
Vc H = -5 V, I,- = 0.5 A. f = 200 MH/
V(-u = -2() V. IR = 0, t'= 1 MH/
Min Typ Max Unit
-50
V
-40
V
-1 UA
-100 UA
-10 "A
80
220
—
- 1 .0
V
-1.5
V
ISO
MH/
45
pF
Rank classification
Rank
0
"FI-I
80 to 160
R
1 20 to 220
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