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BYT30G-400 Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza
componentes Descripción
Fabricante
BYT30G-400
ST-Microelectronics
STMicroelectronics ST-Microelectronics
BYT30G-400 Datasheet PDF : 5 Pages
1 2 3 4 5
BYT30G-400
Fig.1 : Average forward power dissipation versus Fig.2 : Peak current versus form factor.
average forward current.
55 PF(av)(W)
50
=0.5
=1
45
=0.2
40
35
=0.1
30
=0.05
25
20
T
15
10
5
IF(av)(A)
=tp/T
tp
0
0 5 10 15 20 25 30 35 40
I M(A)
500
450
T
400
P = 20 W
350
300
250
IM
=tp/T
tp
200
150
P= 3 0 W
100
50
P = 4 0W
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Fig.3 : Forward voltage drop versus forward cur-
rent (maximum values).
2.0 VFM(V)
1.8
Tj= 100 oC
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
1
I FM(A)
10
100
Fig.4 : Relative variation of thermal impedance
junction to case versus pulse duration.
K
1
Zth(j-c) (tp. )
K=
R th ( j- c)
0.5
=0.5
=0.2
=0.1
T
0.2
Single pulse
0.1
0.001
t p (s )
0.01
=tp/ T
0.1
tp
1
Fig.5 : Non repetitive surge peak forward current Fig.6 : Average current versus ambient tempera-
versus overload duration.
ture. (δ: 0.5)
250 IM(A)
200
150
100
IM
50
0
0.001
t
=0.5
t(s)
0.01
0.1
Tc=25 oC
Tc= 60oC
Tc=100 oC
1
35 IF(av) (A)
30
Rth(j-a)=Rth(j-c)
25 =0.5 T
20
15
=tp/T
tp
10
Rth(j-a)=15 oC/W
5
Tamb( oC)
0
0 20 40 60 80 100 120 140 160
3/5

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