ZM331643N8TA Ver la hoja de datos (PDF) - Zetex => Diodes
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ZM331643N8TA Datasheet PDF : 5 Pages
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ZM33164-3
ABSOLUTE MAXIMUM RATING
Input Supply Voltage
Offstate Output Voltage
Onstate Output
Sink Current(Note 1)
Clamp diode
Forward Current(Note 1)
Operating junction
temperature
Operating Temperature
Storage Temperature
-1 to 12V
12V
Internally limited
100mA
150°C
-40 to 85°C
-65 to 150°C
Power Dissipation
TO92
SOT223
SO8
780mW
2W(Note 2)
780mW(Note 2)
TEST CONDITIONS
(Tamb=25°C for typical values, Tamb=-40 to 85°C for min/max values (Note3))
COMPARATOR
PARAMETER
SYMBOL MIN
TYP.
MAX. UNITS
Threshold Voltage
High state output (Vcc increasing)
VIH
Threshold Voltage
Low state output (Vcc decreasing)
VIL
Hysteresis
VH
OUTPUT
2.55
2.71
2.8
V
2.55
2.65
2.8
V
0.03
0.06
0.15
V
Output sink saturation:
VOL
(Vcc=2.4V, Isink=8.0mA)
(Vcc=2.4V, Isink=2.0mA)
(Vcc=1.0V, Isink=0.1mA)
Onstate output sink current
(Vcc , Output=2.4V)
Isink
10
Offstate output leakage current
Ioh
(Vcc , Output=3V)
Clamp diode forward voltage
(If=10mA)
Vf
0.6
Propagation delay
Td
(Vin 3V to 2.4V, Rl=10k, Tamb=25°C)
TOTAL DEVICE
0.46
1.0
V
0.15
0.4
V
0.25
V
20
60
mA
0.02
0.5
µA
1.2
1.5
V
2.5
µs
Operating input voltage range
Vcc
1.0 to 10
V
Quiescent input current (Vcc=3V)
Iq
125
190
µA
Note:
1. Maximum package power dissipation must be observed
2. Maximum power dissipation, for the SOT223 and SO8 packages, is calculated assuming
that the device is mounted on a PCB measuring 2 inches square.
3. Low duty cycle pulse techniques are used during test to maintain junction temperatures as
close to ambient as possible
4-100
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