2SC3650 Ver la hoja de datos (PDF) - Galaxy Semi-Conductor

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Fabricante

2SC3650

High hFE,Low-Frequency General-Purpose Amplifier Applications

Galaxy Semi-Conductor 

Production specification

High hFE,Low-Frequency

General-Purpose Amplifier Applications

2SC3650

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Test conditions

MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=10uA,IE=0

30

V

Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0

25

V

Emitter-base breakdown voltage

V(BR)EBO IE=10uA,IC=0

15

V

Collector cut-off current

Emitter cut-off current

ICBO

VCB=20V,IE=0

IEBO

VEB=10V,IC=0

0.1 μA

0.1 μA

DC current gain

VCE=5V,IC=500mA

800 1500 3200

hFE

VCE=5V,IC=10mA

600

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Collector output capacitance

VCE(sat)

VBE(sat)

fT

Cob

IC=0.5A, IB=0.01A

IC=0.5A, IB=0.01A

VCE=10V,Ic=50mA

VCB=10V,IE=0,f=1MHz

0.12 0.5

0.85 1.2

220

17

V

V

MHz

pF

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

E053

Rev.A

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