DIM1600FSM17-A000(2002) Ver la hoja de datos (PDF) - Dynex Semiconductor
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DIM1600FSM17-A000 Datasheet PDF : 10 Pages
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DIM1600FSM17-A000
TYPICAL CHARACTERISTICS
3600
Common emitter.
Tcase = 25˚C
3200 Vce is measured at power busbars
and not the auxiliary terminals
2800
2400
2000
1600
1200
800
400
0
0
VGE = 20V
15V
12V
10V
0.5 1 1.5 2 2.5 3 3.5 4
Collector-emitter voltage, Vce - (V)
4.5 5
Fig. 3 Typical output characteristics
3600
3200
Common emitter.
Tcase = 125˚C
Vce is measured at power busbars
and not the auxiliary terminals
2800
2400
2000
1600
1200
800
400
0
0
VGE = 20V
15V
12V
10V
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
Collector-emitter voltage, Vce - (V)
Fig. 4 Typical output characteristics
700
Conditions:
Vce = 900V
600
Tc = 125°C
Rg = 1.5Ω
500
400
300
200
100
0
0
Eon
Eoff
Erec
200 400 600 800 1000 1200 1400 1600
Collector current, IC - (A)
Fig. 5 Typical switching energy vs collector current
2000
1800
1600
Conditions:
Vce = 900V
IC = 1600A
Tc = 125°C
1400
1200
1000
800
600
400
Eon
200
Eoff
Erec
0
0
1
2
3
4
5
6
7
8
Gate resistance, Rg - (Ohms)
Fig. 6 Typical switching energy vs gate resistance
6/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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