DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

CPC7595 Ver la hoja de datos (PDF) - IXYS CORPORATION

Número de pieza
componentes Descripción
Fabricante
CPC7595
IXYS
IXYS CORPORATION IXYS
CPC7595 Datasheet PDF : 25 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
INTEGRATED CIRCUITS DIVISION
CPC7595
1.6.6 Ringing Test Switch, SW8
Parameter
Test Conditions
Symbol Minimum Typical Maximum
Unit
VSW8 (differential) = RTESTin to
RRINGING
All-Off state.
+25° C,
VSW (differential) = -320 V to gnd
0.1
Off-State
VSW (differential) = +320 V to gnd
Leakage Current
+85° C
VSW (differential) = -330 V to gnd
ISW
-
0.3
1
A
VSW (differential) = +330 V to gnd
-40° C
VSW (differential) = -310 V to gnd
0.1
VSW (differential) = +310 V to gnd
ISW (on) = ±10 mA, ±40 mA,
On Resistance
+25° C
+85° C
-40° C
RON
-
35
-
50
70
26
-
VSW (on) = ±10 V,
DC current limit
+25° C
+85° C
-40° C
-
140
-
ISW
80
100
-
mA
-
210
250
Ringing test switches on, all other
Dynamic current limit switches off. Apply ±1 kV, 10x1000 s
(t 0.5 s)
pulse with appropriate protection in
ISW
-
2.5
-
A
place.
Logic input to switch
output isolation
VSW8 (RRINGING, RTESTin)
Logic inputs = GND
+25° C, VSW = ±320 V
+85° C, VSW = ±330 V
0.1
ISW
-
0.3
1
A
-40° C, VSW = ±310 V
0.1
dV/dt sensitivity
100VPP Square Wave, 100Hz
(Not production tested - limits are
-
guaranteed by design and quality
control sampling audits.)
500
-
V/s
10
www.ixysic.com
R03

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]