KTA2012V(2001) Ver la hoja de datos (PDF) - KEC
Número de pieza
componentes Descripción
Fabricante
KTA2012V Datasheet PDF : 3 Pages
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SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
FEATURES
ᴌA Collector Current is Large.
ᴌCollector Saturation Voltage is low.
: VCE(sat)ᴪ-250mV at IC=-200mA/IB=-10mA.
ᴌComplementary to KTC4072V.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
* Single pulse Pw=1mS.
SYMBOL
VCBO
VCEO
IC
ICP *
PC
Tj
Tstg
RATING
-15
-12
-500
-1
100
150
-55ᴕ150
UNIT
V
V
mA
A
mW
ᴱ
ᴱ
KTA2012V
EPITAXIAL PLANAR PNP TRANSISTOR
E
B
2
DIM MILLIMETERS
A
1.2 +_0.05
B
0.8 +_0.05
1
3
C
0.5 +_ 0.05
D
0.3 +_ 0.05
E
1.2 +_ 0.05
G
0.8 +_ 0.05
P
P
H
0.40
J
0.12+_ 0.05
K
0.2 +_ 0.05
P
5
1. EMITTER
2. BASE
3. COLLECTOR
VSM
Marking
Type Name
SZ
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
ICBO
V(BR)CBO
V(BR)CEO
V(BR)EBO
hFE
VCE(sat)
fT
Collector Output Capacitance
Cob
TEST CONDITION
VCB=-15V, IE=0
IC=-10ỌA
IC=-1mA
IE=-10ỌA
VCE=-2V, IC=-10mA
IC=-200mA, IB=-10mA
VCE=-2V, IC=-10mA, fT=100MHz
VCB=-10V, IE=0, f=1MHz
MIN.
-
-15
-12
-6
270
-
-
-
TYP.
-
-
-
-
-
-100
260
6.5
MAX.
-100
-
-
-
680
-250
-
-
UNIT
nA
V
V
V
-
mV
MHz
pF
2001. 8. 17
Revision No : 0
1/3
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